ds30556 rev. 2 - 1 1 of 5 DVRN6056 www.diodes.com diodes incorporated DVRN6056 voltage reference array epitaxial planar die construction ideally suited for automated assembly processes available in lead free/rohs compliant version (note 2) features notes: 1. part mounted on fr-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead. case: sot-26 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminal connections: see diagram terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish annealed over alloy 42 leadframe). please see ordering information, note 5, on page 5 marking: ah1 marking & type code information: see last page ordering information: see last page weight: 0.008 grams (approx.) mechanical data a m j l d f b c h k thermal characteristics @ t a = 25 c unless otherwise specified characteristic symbol value unit power dissipation (note 1) p d 300 mw thermal resistance, junction to ambient (note 1) r ja 417 c/w operating and storage and temperature range t j ,t stg -55 to +150 c maximum ratings, npn transistor element @ t a = 25 c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current - continuous (note 1) i c 600 ma maximum ratings, zener element @ t a = 25 c unless otherwise specified characteristic symbol value unit forward voltage @ i f = 10ma v f 0.9 v t c u d o r p w e n a 1 e 1 k 1 nc c 1 b 1 mmbt4401 udz5v6b sot-26 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d 0.95 f 0.55 h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 0 8 all dimensions in mm
ds30556 rev. 2 - 1 2 of 5 DVRN6056 www.diodes.com electrical characteristics, npn transistor element @ t a = 25 c unless otherwise specified notes: 3. short duration test pulse used to minimize self-heating effect. t c u d o r p w e n electrical characteristics, zener element @ t a = 25 c unless otherwise specified type number zener voltage range (note 3) maximum zener impedance maximum reverse leakage current v z @ i zt i zt z zt @i zt z zk @ i zk = 0.5ma i r @v r nom (v) min (v) max (v) ma a v udz5v6b 5.6 5.49 5.73 5 60 200 1.0 2.5 @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 3) collector-base breakdown voltage v (br)cbo 60 v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 40 v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo 6.0 v i e = 100 a, i c = 0 collector cutoff current i cex 100 na v ce = 35v, v eb(off) = 0.4v base cutoff current i bl 100 na v ce = 35v, v eb(off) = 0.4v on characteristics (note 3) dc current gain h fe 20 40 80 100 40 300 i c = 100a, v ce = 1.0v i c = 1.0ma, v ce = 1.0v i c = 10ma, v ce = 1.0v i c = 150ma, v ce = 1.0v i c = 500ma, v ce = 2.0v collector-emitter saturation voltage v ce(sat) 0.40 0.75 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma base-emitter saturation voltage v be(sat) 0.75 0.95 1.2 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma small signal characteristics output capacitance c cb 6.5 pf v cb = 5.0v, f = 1.0mhz, i e = 0 input capacitance c eb 30 pf v eb = 0.5v, f = 1.0mhz, i c = 0 input impedance h ie 1.0 15 k v ce = 10v, i c = 1.0ma, f = 1.0khz voltage feedback ratio h re 0.1 8.0 x 10 -4 small signal current gain h fe 40 500 output admittance h oe 1.0 30 s current gain-bandwidth product f t 250 mhz v ce = 10v, i c = 20ma, f = 100mhz switching characteristics delay time t d 15 ns v cc = 30v, i c = 150ma, v be(off) = 2.0v, i b1 = 15ma rise time t r 20 ns storage time t s 225 ns v cc = 30v, i c = 150ma, i b1 = i b2 = 15ma fall time t f 30 ns
ds30556 rev. 2 - 1 3 of 5 DVRN6056 www.diodes.com t c u d o r p w e n 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1 max power dissipation vs ambient temperature ( total device ) 150 200 250 300 350 0 npn transistor section 1 10 1000 100 0.1 1 10 1000 100 h,d cc urrent g ain fe i , collector current (ma) c fig. 2 typical dc current gain vs collector current t= -25c a t= +25c a t = 125c a v = 1.0v ce 0.001 0.01 1 10 0.1 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i , base current (ma) b fig. 4 typical collector saturation region v,c o llect o r-emitter v o ltage (v) ce i= 1ma c i= 10ma c i= 30ma c i= 100ma c i= 300ma c 1.0 5.0 20 10 30 0.1 10 1.0 50 c apa c itan c e ( pf ) reverse volts (v) fig. 3 typical capacitance cobo cibo 1 0.1 10 100 v , base emitter v o ltage (v) be(on) i , collector current (ma) c fig. 6 base emitter voltage vs. collector current 0.2 0.3 0.4 0.6 0.5 0.8 0.7 1.0 0.9 v= 5v ce t = 25c a t= -50c a t = 150c a 1 10 100 1000 v,c o llect o rt o emitter ce(sat) saturation voltage (v) i , collector current (ma) c fig. 5 collector emitter saturation voltage vs. collector current t= 25c a t = -50c a t = 150c a 0 0.1 0.2 0.3 0.4 0.5 i c i b = 10
ds30556 rev. 2 - 1 4 of 5 DVRN6056 www.diodes.com t c u d o r p w e n 0 0.2 0.4 0.6 0.8 1. 2 1.0 i,instantane o us f o rward current (ma) f v , instantaneous forward voltage (v) f fig. 8 typical forward characteristics 100 10 1.0 0.1 0.01 1000 -0.08 0.12 -0.04 -0.06 0610 tc of v , temperature c o efficient z of zener voltage (%/c) v , zener voltage (v) z fig. 9 typical temperature coefficient of zener voltage vs. zener voltage, udz5v6b 4 2 8 -0.02 0 0.02 0.04 0.06 0.08 0.10 1 10 100 1000 110100 i , collector current (ma) c fig. 7 gain bandwidth product vs. collector current f , gain bandwidth pr o duct (mhz) t v=5v ce zener section
ds30556 rev. 2 - 1 5 of 5 DVRN6056 www.diodes.com t c u d o r p w e n month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2003 2004 2005 2006 2007 2008 2009 code prs t u vw date code key ah1 ym ah1 = product type marking code ym = date code marking y = year ex: p = 2003 m = month ex: 9 = september marking information notes: 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. for lead free/rohs compliant version part number, please add -f suffix to the part number above. example: DVRN6056-7Cf. ordering information device packaging shipping DVRN6056-7 sot-26 3000/tape & reel (note 4)
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